Infineon AUIRF7759L2TR: High-Performance Automotive MOSFET for Advanced Switching Applications

The relentless drive towards vehicle electrification, advanced driver-assistance systems (ADAS), and more sophisticated power management requires components that deliver uncompromising performance, reliability, and efficiency. At the heart of many of these advanced switching applications lies the power MOSFET. The Infineon AUIRF7759L2TR stands out as a premier solution engineered specifically to meet the rigorous demands of the modern automotive landscape.

This MOSFET is built upon Infineon's proven N-channel trench technology, which is optimized for extremely low on-state resistance. The device boasts an impressive maximum RDS(on) of just 0.8 mΩ at a gate voltage of 10 V. This exceptionally low resistance is a critical figure of merit, as it directly translates to minimized conduction losses and higher overall system efficiency. By wasting less power as heat, designers can create more compact modules without the need for excessive and bulky cooling solutions, a vital advantage in space-constrained automotive environments.

Beyond raw performance, the AUIRF7759L2TR is designed for robustness. It is AEC-Q101 qualified, ensuring it meets the stringent quality and reliability standards required for automotive applications. It can handle a continuous drain current (ID) of 480 A and is rated for a drain-to-source voltage (VDS) of 40 V, making it an ideal candidate for high-current switching tasks. These include, but are not limited to, high-efficiency DC-DC converters in 48V systems, motor control modules for electric power steering (EPS), pumps, and fans, as well as load switches in battery management systems (BMS).

The device also features an ultra-low gate charge, which enables fast switching speeds. This reduces switching losses, further enhancing efficiency, especially in high-frequency operation. The combination of low RDS(on) and low gate charge provides an excellent FOM (Figure of Merit), offering system designers a superior balance between conduction and switching performance. Packaged in a robust D2PAK-7 (TO-263-7) package, the MOSFET offers improved thermal characteristics and higher power density compared to standard packages.

In conclusion, the Infineon AUIRF7759L2TR represents a top-tier choice for engineers developing next-generation automotive electronics. Its blend of ultra-low resistance, high current capability, and automotive-grade ruggedness makes it a cornerstone component for improving the performance and efficiency of critical vehicle systems.

ICGOOODFIND: The Infineon AUIRF7759L2TR is a high-performance automotive MOSFET that excels in advanced switching applications. Its key strengths are its exceptionally low 0.8 mΩ RDS(on), which ensures minimal power loss and high efficiency, and its AEC-Q101 qualification for guaranteed automotive reliability. With a high current rating of 480 A and a robust D2PAK-7 package, it is perfectly suited for demanding roles in 48V systems, motor drives, and DC-DC converters, providing designers with a powerful and reliable solution for cutting-edge automotive power designs.

Keywords:

1. Automotive-Grade

2. Low RDS(on)

3. High Current

4. Power Efficiency

5. Switching Applications