Infineon IRFR1010ZTRPBF N-Channel MOSFET: Datasheet, Application Circuit, and Replacement Guide
The Infineon IRFR1010ZTRPBF is a widely used N-channel power MOSFET designed with the robust HEXFET technology, making it a popular choice for a variety of switching applications. This surface-mount device (SMD) in a D-Pak (TO-252) package offers an excellent balance of performance, cost, and size, catering to the demands of modern electronic design.
Key Datasheet Specifications and Features
A deep dive into the datasheet reveals the core strengths of this component. It is characterized by a drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 44A at 25°C, providing substantial current handling capability. Its standout feature is an exceptionally low on-state resistance (RDS(on)) of just 5.3 mΩ at 10 V gate drive. This low RDS(on) is crucial for minimizing conduction losses, leading to higher efficiency and reduced heat generation in applications like power supplies and motor controls. Furthermore, it is a logic-level MOSFET, meaning it can be fully turned on with a gate-source voltage (VGS) as low as 4V, simplifying direct interfacing with microcontrollers and logic circuits.
Typical Application Circuit
A fundamental application circuit for the IRFR1010ZTRPBF is a low-side switch, commonly used to control loads such as motors, solenoids, or LEDs. In this configuration:
The drain (D) is connected to the load.
The source (S) is connected to ground.
The gate (G) is connected to the output of a driver IC or microcontroller via a small series resistor (e.g., 10-100Ω).
This resistor is critical to dampen ringing and oscillations caused by the MOSFET's high-speed switching and parasitic inductance. A pull-down resistor (e.g., 10kΩ) between the gate and source is also highly recommended to ensure the MOSFET remains firmly off when the driving signal is in a high-impedance state, enhancing circuit reliability.
Replacement and Cross-Reference Guide
When the IRFR1010ZTRPBF is unavailable, finding a suitable substitute requires careful comparison of key parameters. A suitable replacement must match or exceed the following:
Package: TO-252 (D-Pak).
Polarity: N-Channel.
Voltage Rating (VDSS): ≥ 55V.
Current Rating (ID): ≥ 44A.
RDS(on): A similar or lower value is ideal.
Potential alternative parts include:
IRFR1205ZPBF: A very close alternative from Infineon with a slightly higher RDS(on) but similar characteristics.
AON7400: From Alpha & Omega Semiconductor, offering comparable performance in a similar package.
SUD50N04-09L-E3: A Vishay/Siliconix part that serves as a viable substitute.
Always consult the latest datasheets to verify pinouts, threshold voltages, and gate capacitance, as these can impact circuit performance even if the core specifications seem identical.
ICGOODFIND: The Infineon IRFR1010ZTRPBF stands out as a highly efficient and reliable N-Channel MOSFET, prized for its very low on-resistance and high current capacity. Its logic-level control makes it exceptionally easy to use in microcontroller-based projects. When selecting a replacement, meticulous attention to voltage, current, and RDS(on) thresholds is paramount to ensure system integrity and performance.
Keywords: N-Channel MOSFET, Low On-Resistance, Logic Level, HEXFET Technology, Switching Applications.
