Infineon IPB036N12N3G: A High-Performance 300 A OptiMOS 5 Power MOSFET
In the realm of power electronics, achieving high efficiency and power density is paramount. The Infineon IPB036N12N3G, a member of the advanced OptiMOS™ 5 technology family, stands out as a benchmark for high-performance power conversion. Engineered to meet the rigorous demands of modern applications, this power MOSFET is designed to deliver exceptional efficiency and reliability in a compact package.
At the heart of this device is its ultra-low gate charge (Qg) and outstanding reverse recovery performance, which are critical for minimizing switching losses in high-frequency circuits. With a maximum continuous drain current of 300 A and a low on-state resistance (RDS(on)) of just 3.6 mΩ at 10 V, the IPB036N12N3G ensures minimal conduction losses, even under heavy load conditions. This makes it particularly suitable for demanding applications such as server and telecom power supplies, industrial motor drives, and high-performance synchronous rectification.

The MOSFET’s superior thermal performance is another key advantage. Housed in an innovative D2PAK-7 SMD (TO-263-7) package, it offers an optimized footprint for space-constrained designs while providing excellent heat dissipation. This allows designers to push the limits of power density without compromising thermal management.
Furthermore, the device’s enhanced avalanche ruggedness and high body diode robustness ensure reliable operation under stressful conditions, such as overloads or sudden transients. Its compatibility with fast-switching frequencies also enables the design of smaller, more efficient magnetic components, contributing to overall system miniaturization.
ICGOOODFIND: The Infineon IPB036N12N3G exemplifies the evolution of power MOSFET technology, combining high current handling, low losses, and excellent thermal characteristics to address the needs of next-generation power systems.
Keywords:
OptiMOS™ 5, Low RDS(on), High Current Capability, Power Density, Thermal Performance
