Infineon BSC047N08NS3: A High-Performance OptiMOS™ Power MOSFET for Advanced Switching Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon Technologies with its OptiMOS™ family, and the BSC047N08NS3 stands out as a prime example of a high-performance N-channel power MOSFET engineered to meet the demanding requirements of modern switching applications.

This device is built using Infineon’s advanced proprietary process technology, which is optimized for low figure-of-merit (R DS(on) Q G). The BSC047N08NS3 boasts an exceptionally low on-state resistance (R DS(on)) of just 4.7 mΩ maximum at 10 V, significantly reducing conduction losses. This characteristic is paramount in applications like synchronous rectification in switch-mode power supplies (SMPS) and motor control circuits, where minimizing energy waste as heat is critical for achieving high overall efficiency.

Complementing its low conduction loss is its superior switching performance. The MOSFET features low gate charge (Q G) and low effective output capacitance (C OSS eff), which directly translates to faster switching speeds and reduced switching losses. This makes it an ideal candidate for high-frequency DC-DC converters, particularly in demanding environments such as server and telecom power supplies, where operating frequencies continue to climb to reduce the size of passive components.

Housed in a space-saving, low-profile SuperSO8 package, the BSC047N08NS3 also excels in thermal management and power density. The package offers very low parasitic inductance and an excellent thermal connection to the PCB, allowing designers to extract maximum performance while minimizing the board space required. Its robustness and reliability are further enhanced with features like a high maximum drain current (I D) and an avalanche-rated design, ensuring stable operation under strenuous conditions.

In summary, the Infineon BSC047N08NS3 OptiMOS™ MOSFET delivers a powerful combination of ultra-low R DS(on), fast switching capability, and excellent thermal performance, making it a top-tier solution for designers pushing the boundaries of power conversion technology.

ICGOOODFIND: The Infineon BSC047N08NS3 is a benchmark in power MOSFET design, offering an optimal blend of minimal conduction and switching losses. Its high efficiency and robust construction in a compact package make it an indispensable component for advanced, high-frequency power conversion systems, from enterprise computing to industrial drives.

Keywords: Power MOSFET, Low RDS(on), High-Frequency Switching, Synchronous Rectification, Thermal Management.