Infineon IPW60R017C7 CoolMOS™ P7 Power Transistor: Datasheet, Application Notes, and Key Features

The Infineon IPW60R017C7 stands as a prime example of advanced power semiconductor technology, belonging to the esteemed CoolMOS™ P7 family. Engineered for high-efficiency and high-density power conversion systems, this 600V Superjunction MOSFET is designed to meet the rigorous demands of modern switch-mode power supplies (SMPS), server and telecom power systems, industrial drives, and renewable energy applications.

Key Features

At the core of the IPW60R017C7's performance is its exceptionally low effective output capacitance (Coss,eff) and superior switching characteristics. This results in significantly reduced switching losses, especially at light loads, which is critical for achieving high efficiency across a wide operational range. Its ultra-low on-state resistance (RDS(on)) of just 17 mΩ maximizes conduction efficiency, minimizing heat generation and improving thermal performance.

The device also boasts an integrated fast body diode with excellent reverse recovery behavior. This feature is vital for hard-switching topologies like power factor correction (PFC) stages, as it reduces voltage overshoot and electromagnetic interference (EMI). Furthermore, the P7 technology ensures high robustness and reliability, offering a wide safe operating area (SOA) and high avalanche ruggedness, which enhances system durability under stressful conditions.

Datasheet Insights

The official datasheet is the ultimate source for all critical parameters. Key specifications to note include:

Drain-Source Voltage (VDS): 600 V

Continuous Drain Current (ID): 48 A (at 100°C)

RDS(on) (max): 17 mΩ (@ VGS = 10 V, ID = 24 A)

Gate-Source Voltage (VGS): ±20 V

Total Gate Charge (Qg): 70 nC (typical)

These figures highlight the transistor's capability to handle high power levels with minimal losses, making it an ideal choice for high-current output stages.

Application Notes

Implementing the IPW60R017C7 effectively requires careful design consideration. Proper gate driving is paramount; a low-inductance driver circuit with a recommended gate resistor is necessary to control switching speed and mitigate ringing. Heatsinking is also crucial due to the high-power nature of its applications. Designers should utilize the thermal resistance data (RthJC) provided in the datasheet to design an adequate cooling solution, ensuring the junction temperature remains within safe limits.

The benefits of the low Coss,eff are most pronounced in quasi-resonant (QR) and burst-mode operation designs, common in modern adapters and TV power supplies, where it drastically improves light-load and standby efficiency. For PFC circuits, its fast diode enables operation at higher frequencies, allowing for smaller magnetic components.

ICGOOODFIND: The Infineon IPW60R017C7 CoolMOS™ P7 is a benchmark in high-voltage MOSFET technology, delivering a superior blend of ultra-low conduction losses, minimal switching losses, and high system robustness. It is a transformative component for designers striving to push the boundaries of power density and efficiency in next-generation power electronics.

Keywords: CoolMOS™ P7, High-Efficiency, Low Switching Losses, 600V MOSFET, Power Transistor