Infineon IKW75N60T 600V 75A TRENCHSTOP™ 5 High Speed IGBT Datasheet Analysis
The Infineon IKW75N60T is a high-speed Insulated Gate Bipolar Transistor (IGBT) engineered for high-performance switching applications. Representing the advanced TRENCHSTOP™ 5 technology, this 600V, 75A device is optimized to deliver an exceptional balance between low conduction losses and high switching speed, making it a premier choice for power electronic designs.
A core highlight of this IGBT is its ultra-low VCE(sat) of 1.55V (typical at 75A, 25°C). This low collector-emitter saturation voltage directly translates to reduced conduction losses during the on-state, significantly enhancing overall system efficiency and minimizing heat generation. This characteristic is particularly beneficial in high-current applications like industrial motor drives and uninterruptible power supplies (UPS), where energy savings and thermal management are critical.
Complementing its low conduction losses is its high-speed switching capability. The TRENCHSTOP™ 5 technology minimizes turn-on and turn-off times, which is essential for operating at higher frequencies. This allows for the design of smaller and lighter magnetic components (inductors and transformers) in systems such as solar inverters and welding equipment, leading to reduced system size and cost.
The device also features a robust and rugged intrinsic design. It offers a short-circuit withstand time (tsc) of 5µs, providing a critical safety margin for control circuits to react under fault conditions. Furthermore, the positive temperature coefficient of VCE(sat) facilitates easier paralleling of multiple IGBTs for higher power output, as it promotes an even distribution of current between devices.
The integrated anti-parallel emitter-controlled diode is another key advantage. This fast and soft-recovery diode ensures reverse recovery behavior that minimizes voltage overshoots and electromagnetic interference (EMI), contributing to system reliability and simplifying the design of snubber circuits.
Housed in a TO-247 package, the IKW75N60T provides excellent thermal performance, enabling efficient heat dissipation away from the silicon die. This robust physical construction ensures high power cycling capability and long-term reliability in demanding environments.
ICGOOODFIND: The Infineon IKW75N60T stands out as a highly efficient and robust solution for power switching. Its optimal blend of ultra-low saturation voltage, high-speed switching performance, and ruggedness makes it an ideal component for advanced power conversion systems seeking to maximize power density and reliability.
Keywords: IGBT, TRENCHSTOP™ 5, High-Speed Switching, Low VCE(sat), Power Efficiency.
